12 μm long edge-emitting quantum-dot laser

Electronics Letters

Volumn 37, Issue 11, 2001, Pages 690-691

  Rennon, S ^a   Klopf, F ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EDGE DETECTION; LASER RESONATORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS;

DISTRIBUTED BRAGG REFLECTORS (DBR); EDGE EMITTING MICRO LASERS;

SEMICONDUCTOR LASERS;

EID: 0035942697     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010488     Document Type: Article

References (7)

1. Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors
2. Edge emitting GaInAs/AlGaAs microlasers
3. Quantum-dot microlasers
4. Design equations for the reflectivity of deep-etch distributed Bragg reflector gratings
5. Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasers
6. Reactive ion etching of deeply etched DBR-structures with reduced air-gaps for highly reflective monolithically integrated laser mirrors
7. 0.85As quantum well