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Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 167-170

Optical properties of Pr implanted GaN epilayers and AlxGa1-xN alloys

(7) Ellis, C J a Mair, R M a Li, J a Lin, J Y a Jiang, H X a Zavada, J M b Wilson, R G c

a KANSAS STATE UNIVERSITY (United States)

b ARL European Research Office (United Kingdom)

c Stevenson Ranch (United States)

Author keywords

AlGaN alloys; Ion implantation; Photoluminescence; Praseodymium

Indexed keywords

ANNEALING; ENERGY GAP; ION IMPLANTATION; LIGHT EMISSION; NITRIDES; PHOTOLUMINESCENCE; PRASEODYMIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPY;

EPILAYERS; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035942374 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00715-7 Document Type: Article

Times cited : (7)

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