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Thin Solid Films

Volumn 392, Issue 1, 2001, Pages 122-127

Dry patterning of copper films using an O2 plasma and hexafluoroacetylacetone

(7) Lee, Wonhee a Yang, Hee Jeong b Reucroft, P J c Soh, Hoe Sup d Kim, Jeong Hyun d Woo, Sang Lok e Lee, Jaegab b

a Sejong University (South Korea)

b Kookmin University (South Korea)

c UNIVERSITY OF KENTUCKY (United States)

d LG Display Co Ltd (South Korea)

e Sam Han Vacuum Development Co LTD (South Korea)

Author keywords

Copper; Deposition process; Etching; Metallization

Indexed keywords

COPPER; INTERFACES (MATERIALS); MASKS; METALLIC FILMS; METALLIZING; OXIDATION; PLASMA ETCHING; SUBSTRATES; THIN FILM TRANSISTORS;

ISOTROPIC ETCHING;

SEMICONDUCTING FILMS;

EID: 0035939533 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)00907-5 Document Type: Article

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.