Reactive ion etching of copper films in a SiCl4, N2, Cl2, and NH3 mixture

Journal of the Electrochemical Society

Volumn 143, Issue 12, 1996, Pages 4089-4095

  Ohno, Kazuhide ^a   Sato, Masaaki ^a   Arita, Yoshinobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHLORINE; COMPOSITION EFFECTS; COPPER; NITROGEN; PRESSURE EFFECTS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; VAPOR PRESSURE;

COPPER FILMS; ETCHING GAS PRESSURE; ETCHING RATE; FLOW RATE; PROTECTIVE FILMS;

SEMICONDUCTING FILMS;

EID: 0030416589     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837341     Document Type: Article

References (8)

1. G. C. Schwartz and P. M. Schaible, This Journal, 130, 1777 (1983).
2. K. Ohno, M. Sato, and Y. Arita, Jpn. J. Appl. Phys. Lett., 28, 1070 (1989).
3. K. Ohno, M. Sato, and Y. Arita, in Extended Abstracts of the 21st Conference on Solid State Device and Materials, p. 157, Tokyo (1989).
4. M. Sato, H. Nakamura, J. Vac. Sci. Technol, 20, 186 (1982).
5. P. H. Holloway, Surf. Sci., 54, 506 (1976).
6. S. Thomas and R. J. Mattox, This Journal, 124, 1942 (1977).
7. E. Blanc, J. P. Segaud, and C. Lauroz, Appl. Surf. Sci., 37, 1 (1989).
8. Handbook of Chemistry and Physics, R. C. Weast and S. M. Selby, Editors, The Chemical Rubber Co., Cleveland, OH (1966)