HREM study of basal stacking faults in GaN layers grown over sapphire substrate

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 114-116

  Potin, V ^a   Gil, B ^a   Charar, S ^a   Ruterana, P ^b   Nouet, G ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b LABORATOIRE CRISMAT   (France)

Author keywords

GaN; HREM; Stacking faults

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR GROWTH; STACKING FAULTS; SUBSTRATES;

BASAL STACKING FAULTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035933206     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00709-1     Document Type: Article

References (15)