Etch end-point detection of GaN-based devices using optical emission spectroscopy

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 159-162

  Kim, H S ^b   Sung, Y J ^a   Kim, D W ^a   Kim, T ^b   Dawson, M D ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

AlGaN GaN; Etch end point detection (EPD); OES

Indexed keywords

EMISSION SPECTROSCOPY; ETCHING; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS;

OPTICAL EMISSION SPECTROSCOPY (OES);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035933137     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00798-4     Document Type: Article

References (7)