Electronic properties of doped SiC at elevated temperatures studied by Raman scattering

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 449-454

  Harima, H ^a   Hosoda, T ^a   Nakashima, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Carrier Density; Coupled Mode; Damping; Fano Interference; High Temperature; LO Phonon; Mobility; Plasmon; Raman Scattering

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; HIGH TEMPERATURE EFFECTS; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

CARRIER MOBILITY; FANO INTERFERENCE; LINESHAPE FITTING ANALYSIS;

SILICON CARBIDE;

EID: 0031698879     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.449     Document Type: Article

References (10)

1. H. Harima, S. Nakashima and T. Uemura, J.Appl.Phys.78 (1995) p.1996.
2. M.V. Klein, in Light Scattering in Solids, edited by M. Cardona, (Springer, Berlin, 1975) p. 147.
3. U. Fano, Phys.Rev. 124 (1961) p.1866.
4. H. Harima and S. Nakashima, Inst.Phys.Conf.Ser.No.142 Silicon Carbide and Related Materials, edited by S. Nakashima et al., (IOP, London, 1995) p.365.
5. M. Balkanski, R.F. Wallis and E. Haro, Phys.Rev.B 28 (1983) p.1928.
6. G. Irmer, V.V. Toporov, B.H. Bairamov and J. Monecke, Phys. Status Solidi B 119 (1983) p.595.
7. M.V. Klein, B.N. Ganguly and P.J. Colwell, Phys.Rev. B6 (1972) p.2380.
8. W. Götz, A. Schöner, G. Pensl, W. Suttrop, W.J. Choyke, R. Stein and Leibenzeder, J.Appl.Phys. 73 (1993) p.3332.
9. L. Patrick, Phys.Rev. 38 (1967) p.50.
10. G. Contreras, A.K. Sood, and M. Cardona, Phys.Rev.B 32 (1985) p.924.