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Surface Science

Volumn 494, Issue 2, 2001, Pages 53-59

Ab initio calculations of the H-induced surface restructuring on β-SiC(001)-(3 × 2)

(2) Pizzagalli, L a Catellani, A b

a UMR6630 SP2MI (France)

b CNR (Italy)

Author keywords

Chemisorption; Density functional calculations; Hydrogen atom; Silicon carbide; Surface relaxation and reconstruction

Indexed keywords

CHEMISORPTION; HYDRIDES; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SURFACE PHENOMENA;

SURFACE RESTRUCTURING;

HYDROGEN;

EID: 0035923339 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01482-0 Document Type: Article

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.