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Surface Science

Volumn 487, Issue 1-3, 2001, Pages 171-179

Initial stage of in-phase step wandering on Si(1 1 1) vicinal surfaces

(6) Degawa, M a Thurmer K b Morishima, I a Minoda, H a Yagi, K a Williams, E D b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b Bldg 142 (United States)

Author keywords

Adatoms; Scanning tunneling microscopy; Silicon; Surface diffusion; Vicinal single crystal surfaces

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; OPTICAL MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THERMODYNAMICS;

ADATOMS; SURFACE DIFFUSION;

SURFACE CHEMISTRY;

EID: 0035919893 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01089-5 Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.