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Volumn 368, Issue 2, 2000, Pages 283-286
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Microstructure and semiconducting properties of c-BN films using r.f. plasma CVD thermally assisted by a tungsten filament
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION SPECTROSCOPY;
COMPRESSIVE STRESS;
CRYSTAL MICROSTRUCTURE;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
ELECTRON ENERGY LOSS SPECTROSCOPY;
INTERFACIAL ENERGY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING SILICON;
STRUCTURE (COMPOSITION);
TUNGSTEN;
INFRARED ABSORPTION SPECTRA;
CUBIC BORON NITRIDE;
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EID: 0033689902
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)00783-5 Document Type: Article |
Times cited : (4)
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References (15)
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