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Thin Solid Films

Volumn 401, Issue 1-2, 2001, Pages 235-242

Polycrystalline silicon thin films for microsystems: Correlation between technological parameters, film structure and electrical properties

(5) Michelutti, L a,d Chovet, A a Stoemenos, J b Terrot, J M a Ionescu, M A c

a GRENOBLE INSTITUTE OF TECHNOLOGY (France)

b ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

c EPFL (Switzerland)

d IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

Chemical vapor deposition; Electrical properties and measurements; Silicon; Structural properties

Indexed keywords

LOW FREQUENCY NOISE ANALYSIS;

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 0035904937 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01605-4 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.