Bias dependent contrast mechanisms in EBIC images of MOS capacitors

Journal of the Electrochemical Society

Volumn 146, Issue 4, 1999, Pages 1529-1535

  Kirk, H R ^a   Radzimski, Z ^b   Romanowski, A ^a   Rozgonyi, G A ^a  

^a North Carolina State University   (United States)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRON BEAMS; EPITAXIAL GROWTH; OXIDES; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

BIAS DEPENDENCE; COLLECTED SIGNALS; CONTRAST MECHANISMS; ELECTRON BEAM INDUCED CURRENT TECHNIQUE; GATE TO SUBSTRATE BIAS; IMAGE CONTRAST; PREBREAKDOWN CONDITION;

MOS CAPACITORS;

EID: 0032668024     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391799     Document Type: Article

References (38)

1. H. R. Kirk, J. G. Park, D. M. Lee, and G. A. Rozgonyi, in The Degradation of Electronic Devices Due to Device Operation as well as Crystalline and Process-Induced Defects, H. J. Queisser, J. E. Chung, K. E. Bean, T. J. Schaffner, and H. Tsuga, Editors, PV 94-1, p. 275, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
2. H. R. Kirk, Z. Radzimski, A. Buczkowski, and G. A. Rozgonyi, IEEE Trans. Electron Devices, ED-41, 959 (1994).
3. H. R. Kirk, Z. Radzimski, A. Romanowski, and G. A. Rozgonyi, Solid State Phenom, Vol. 51-52, S. Pizzini, H. P, Strunk, and J. H. Werner, Editors, Scitec Publications Ltd., Switzerland (1996).
4. I. Bondarenko, H. R. Kirk, O. Kononchuk, and G. A. Rozgonyi, Mater. Sci. Eng., B42, 32 (1996).
5. J-G. Park, H. R. Kirk, K-C. Cho, H-K. Lee, C-S. Lee, and G. A. Rozgonyi, in Semiconductor Silicon/1994, H. R. Huff, W. Bergholtz, and K. Summino, Editors, PV 94-10, p. 370, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
6. J-G. Park, H. R. Kirk, C-S. Lee, H-K. Lee, D-M. Lee, and G. A. Rozgonyi, in Proceedings of the Symposium on the Degradation of Electronic Devices Due to Device Operation as well as Crystalline and Process-Induced Defects, H. J. Queisser, J. E. Chung, K. E. Bean, T. J. Schaffner, and H. Tsuya, Editors, PV 94-1, p. 57, The Electrochemical Society Proceedings Series, Pennington, NJ (1992).
7. S. K. Kolachina and R. Lai, Appl. Phys. Lett., 61, 438 (1992).
8. 2 Interface 2, p. 289, Plenum Pub. Corp., New York (1993).
9. K. Nakamae, H. Fujioka and K. Ura, Phys. D: Appl. Phys., 24, 963 (1991).
10. W. S. Lau, D. S. H. Chan, J. C. H. Phang, K. W. Chow, K. S. Pey, and Y. P. Lim, Appl. Phys. Lett., 63, 2240 (1993).
11. W. S. Lau, K. S. H. Chan, J. C. H. Phang, K. W. Chow, K. S. Pey, Y. P. Lim, and B. Cronquist, Proc. IEEE/JRPS, 190 (1993).
12. W. S. Lau, K. S. H. Chan, J. C. H. Phang, K. W. Chow, K. S. Pey, Y. P. Lim, and B. Cronquist, J. Appl. Phys., 77, 730 (1995).
13. M. Tamatsuka, M. Kimura, S. Oka, and G. A. Rozgonyi, in High Purity Silicon IV, C. L. Claeys, P. Rai-Choudhury, P. Stallhofer, and J. E. Maurtis, Editors, PV 96-13, p. 345, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
14. H. J. Leamy, J. Appl. Phys., 53, R51, (1982).
15. D. B. Holt, in SEM Microcharacterization of Semiconductors, D. B. Holt and D. C. Joy, Editors, p. 239, Academic Press, San Diego (1989).
16. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, John Wiley & Sons, New York (1977).
17. G. L. Miller and W. M. Gibson, in Nuclear Electronics I, pp. 447-493, Int. Atomic Agency, Vienna (1963).
18. A. S. M. Salih, J. S. Ryu, and G. A. Rozgonyi, J. Electmchem. Soc., 133, 475, (1986).
19. Z. J. Radzimski, T. Q. Zhou, A. Buczkowski, and G. A. Rozgonyi, Appl. Phys. Lett., 60, 1096 (1992).
20. Z. J. Radzimski, A. Buczkowski, T. Q. Zhou, C. Dubé, and G. A. Rozgonyi, Scanning Micros., 7(2), 513 (1993).
21. S. Fang and D. McVittie, IEEE Electron Device Lett., EDL-13, 288 (1992).
22. W. Wu and P. K. McLarty, J. Vac. Sci. Technol. A, 13, 67 (1995).
23. S. J. Fonash, Solid State Technol., 28, 201 (April 1985).
24. K. Moghadam and M. Xiao-Chun, IEEE Trans. Electron Device, 36, 1602 (1989).
25. G. Oherlein, Mater. Sci. Eng., B4, 441 (1989).
26. S. Ashok, T. P. Chow, and B. J. Baliga, Appl. Phys. Lett., 42, 687, (1983).
27. A. Henry, O. O. Awadelkarim, J. L. Lindstrom, and G. S. Oehrlein, J. Appl. Phys., 55, 5388 (1989).
28. N. Lifshitz, J. Electrochem. Soc., 130, 1549 (1983).
29. 2 Interface, C. R. Helms and B. E. Deal, Editors, p. 445, Plenum Press, New York (1988).
30. P. S. D Lin, R. B. Marcus, and T. T. Sheng, J. Electrochem. Soc., 130, 2278 (1983).
31. P. S. D. Lin and H. J. Leamy, Appl. Phys. Lett., 42, 717 (1983).
32. W. R. Bottoms, P. Roitman, and D. C. Guterman, CRC Critical Reviews in Solid State Sciences, 297 (1975).
33. W. R. Bottoms and P. Roitman, Sanning Electron Microscopy, 731 (1977).
34. T. E. Everhart and P. H. Hoff, J. Appl.Phys., 42, 5837 (1971).
35. E. H. Snow, S. S. Grove, and D. J. Fitzgerald, Proc. IEEE, 55, 1168 (1967).
36. R. C. Hughes, Phys. Rev. Lett., 30, 1333 (1973).
37. R. C. Hughes, Appl. Phys. Lett., 27, 436 (1975).
38. K. H. Zanninger, IEEE Trans. Nucl. Sci., 13, 237 (1966).