I-v characteristics of a-si:h p-i-n diodes with uniform and non-uniform defect distributions

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages A1031-A1036

  Kroon, M A ^a   Van Swaaij, R A C M M ^a   Metselaar, J W ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS;

DEFECT-POOL MODELS (DPM);

SEMICONDUCTOR DIODES;

EID: 0034431140     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-609-a10.3     Document Type: Article

References (16)