All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films

Journal of Applied Physics

Volumn 89, Issue 12, 2001, Pages 8153-8158

  Ota, H ^a   Fujino, H ^a   Migita, S ^a   Xiong, S B ^a   Sakai, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035875323     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1370999     Document Type: Article

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