Thin and low-resistivity tantalum nitride diffusion barrier and giant-grain copper interconnects for advanced ULSI metallization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2401-2405

  Nakao, Shin Ichi ^a   Numata, Masashi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Copper interconnects; Diffusion barrier; Giant grain; Reactive sputtering; Tantalum nitride; ULSI metallization

Indexed keywords

EID: 0001350914     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2401     Document Type: Article

References (9)

1. T. Takewaki, R. Kaihara, T. Ohmi and T. Nitta: Tech. Dig. Int. Electron Device Meet. (1995) p. 253.
2. M.-A. Nicolet: Thin Solid Films 52 (1978) 415.
3. E. Kolawa, J. S. Chen, J. S. Reid, P. J. Pokcla and M.-A. Nicolet: J. Appl. Phys. 70 (1991) 1369.
4. K.-C. Park, K.-B. Kim, I. J. M. M. Raaijmakcrs and K. Ngan: J. Appl. Phys. 80 (1996) 5674.
5. P. J. Pokela, C.-K. Kwok, E. Kolawa, S. Raud and M.-A. Nicolet: J. Appl. Surf. Sci. 53 (1991) 364.
6. K. Holloway, P. M. Fryer, C. Cabrai, J. M. E. Harper Jr., P. J. Bailey and K. H. Kelleher: J. Appl. Phys. 71 (1992) 5433.
7. T. Ohmi, T. Ichikawa, H. Iwabuchi and T. Shibata: J. Appl. Phys. 66 (1989) 4756.
8. T. Ohmi, K. Hashimoto, M. Morita and T. Shibata: J. Appl. Phys. 69 (1991) 2062.
9. T. Ohmi, T. Saito, M. Otsuki, T. Shibata and T. Nitta: J. Electrochem. Soc. 138 (1991) 1089.