Study of mixed group-V nitrides grown by gas-source molecular beam epitaxy using a nitrogen radical beam source

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 203-208

  Bi, W G ^a   Tu, C W ^a   Mathes, D ^a   Hull, R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

GAS-SOURCE MOLECULAR BEAM EPITAXY; MIXED NITRIDES;

MOLECULAR BEAM EPITAXY;

EID: 0030644704     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)