Impedance spectroscopic analysis of forward biased metal oxide semiconductor tunnel diodes (MOSTD)

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 740-745

  Matsumura, M ^a   Hirose, Y ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

Impedance spectroscopy; MOS tunnel diode; Schottky diodes; Ultrathin oxide

Indexed keywords

MOS DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS; SPECTROSCOPY; ULTRATHIN FILMS;

IMPEDANCE SPECTROSCOPY; METAL OXIDE SEMICONDUCTOR TUNNEL DIODES;

TUNNEL DIODES;

EID: 0035873579     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00086-1     Document Type: Article

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