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Volumn 39, Issue 2 B, 2000, Pages
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Negative-capacitance effect in forward-biased metal oxide semiconductor tunnel diodes (MOSTD)
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONDUCTIVITY;
ELECTRIC IMPEDANCE;
ELECTRIC INDUCTORS;
EQUIVALENT CIRCUITS;
GATES (TRANSISTOR);
RESISTORS;
SEMICONDUCTING SILICON;
SUBSTRATES;
TUNNEL DIODES;
ULTRATHIN FILMS;
CONDUCTIVITY MODULATION;
IMPEDANCE SPECTRA;
MINORITY CARRIER INJECTION;
NEGATIVE CAPACITANCE EFFECT;
ULTRATHIN OXIDE;
MOS DEVICES;
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EID: 0033897544
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.39.L123 Document Type: Article |
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Times cited : (18)
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References (17)
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