Tunnel barrier properties of stressed ferromagnetic tunnel junctions

Electronics Letters

Volumn 37, Issue 6, 2001, Pages 356-358

  Das, J ^a   Degraeve, R ^a   Boeve, H ^a   Duchamps, P ^a   Lagae, L ^a   Groeseneken, G ^a   Borghs, G ^a   De Boeck, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIALS; MAGNETORESISTANCE; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; STATISTICAL METHODS; STRESSES; ULTRATHIN FILMS;

ALUMINUM OXIDE; MAGNETIC TUNNEL JUNCTIONS; STRESS MEASUREMENTS; TUNNEL BARRIERS;

TUNNEL JUNCTIONS;

EID: 0035868072     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010262     Document Type: Article

References (11)

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6. Spin-tunnel-junction thermal stability and interface interdiffusion above 300°C
7. Tunneling conductance of asymmetrical barriers
8. x/NiFe junctions fabricated from a wedged Al layer
9. 20 tunnel junctions
10. Instabilities in silicon devices
11. Experimental evidence for voltage driven breakdown models in ultrathin gate oxides