Theoretical investigation of effective quantum dots induced by strain in semiconductor wires

Materials Research Society Symposium - Proceedings

Volumn 536, Issue , 1999, Pages 533-538

  Shiraishi, Kenji ^a   Masaonagase, Seiji Horiguchi ^a   Kageshima, Hiroyuki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; NITRIDING; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WIRES; STRAIN; STRESSES; TRANSISTORS; TWO DIMENSIONAL;

COMPRESSIVE STRAIN; ELECTRON TRANSISTOR;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032591455     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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