Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry

Applied Physics Letters

Volumn 79, Issue 24, 2001, Pages 3917-3919

  Nagashima, Takeshi ^a   Hangyo, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035842758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1426258     Document Type: Article

References (8)

1. T. I. Jeon and D. Grischkowsky, Appl. Phys. Lett. 72, 3032 (1998).
2. M. Li, G. C. Cho, T.-M. Lu, X. C. Zhang, S.-Q Wang, and J. T. Kennedy, Appl. Phys. Lett. 74, 2113 (1999).
3. S. C. Howells and L. A. Schile, Appl. Phys. Lett. 69, 550 (1996).
4. S. Nashima, K. Takata, and M. Hangyo, Appl. Phys. Lett. 79, 3923 (2001).
5. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1977).
6. M. Born and E. Wolf, Principles of Optics, 7th ed. (Cambridge University Press, Cambridge, 1999), Chap. 14.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
8. J. D. Holm and K. S. Champlin, J. Appl. Phys. 39, 275 (1968).