Deuterium depth profiles at CVD diamond surfaces

Surface Science

Volumn 481, Issue 1-3, 2001, Pages

  Bergmaier, A ^a   Dollinger, G ^a   Aleksov, A ^b   Gluche, P ^b   Kohn, E ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Chemical vapor deposition; Diamond; Field effect; Hydrogen atom; Surface electrical transport (surface conductivity, surface recombination, etc.)

Indexed keywords

DEUTERIUM; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; FILM GROWTH; HYDROGEN; METHANE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE PHENOMENA; SURFACE TREATMENT;

DEPTH PROFILING; HOMOEPITAXY; SURFACE RECOMBINATION;

DIAMOND FILMS;

EID: 0035838042     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01030-5     Document Type: Article

References (15)