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Volumn 34, Issue 21, 2001, Pages 3130-3138

Voltage evolution of the recombination zone and emission quantum yield in organic light-emitting diodes with doped and undoped emitter layers

(4) Kalinowski, Jan a Murata, Hideyuki b,c Picciolo, Lisa C b Kafafi, Zakya H b

a GDANSK UNIVERSITY OF TECHNOLOGY (Poland)

b NAVAL RESEARCH LABORATORY (United States)

c IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; DISSOCIATION; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; LUMINESCENT DEVICES; ORGANIC COMPOUNDS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

DOPANT CONCENTRATION LEVELS; EMISSION QUANTUM YIELD; EMITTER LAYERS; INDIUM TIN OXIDE; ORGANIC LIGHT EMITTING DIODES; RECOMBINATION ZONE; SINGLET-CHARGE CARRIER ANNIHILATION; VOLTAGE EVOLUTION;

LIGHT EMITTING DIODES;

EID: 0035824102 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/34/21/305 Document Type: Article

Times cited : (17)

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