Hole transport in vapor-deposited triphenylmethane glasses

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2698-2703

  Borsenberger, P M ^a   Gruenbaum, W T ^a   Magin, E H ^a  

^a EASTMAN KODAK COMPANY   (United States)

Author keywords

Disorder controlled hopping; Hole transport; Triphenylmethane glasses

Indexed keywords

CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; GLASS; MOLECULAR DYNAMICS;

CHARGE DELOCALIZATION; DIPOLE MOMENTS; DISORDER CONTROLLED HOPPING; HOLE TRANSPORT; POSITIONAL DISORDER; TRIPHENYLMETHANE GLASSES;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030149745     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2698     Document Type: Article

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