Fabrication technology for miniaturization of the spin-valve transistor

Sensors and Actuators, A: Physical

Volumn 91, Issue 1-2, 2001, Pages 166-168

  Kim, S D ^a   Van't Erve, O M J ^a   Jansen, R ^a   Anil Kumar, P S ^a   Vlutters, R ^a   Lodder, J C ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

CPP; Giant magnetoresistance; Hot electrons; Spin valve; Transistor

Indexed keywords

BONDING; ETCHING; GIANT MAGNETORESISTANCE; HOT CARRIERS; MAGNETIC DEVICES; PHOTOLITHOGRAPHY; RANDOM ACCESS STORAGE; SENSORS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS; VACUUM APPLICATIONS;

HOT ELECTRONS; MAGNETIC FIELD SENSORS; MAGNETOCURRENT; SPIN VALVE TRANSISTOR; VACUUM METAL BONDING;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0035811398     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00518-0     Document Type: Article

References (8)

1. Giant magnetoresistance of (0 0 1)Fe/(0 0 1)Cr magnetic superlattices
2. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange
3. Theoretical approach to the spin-dependent hot-electron transport in a spin valve
4. Giant magnetoresistance properties of CoFe/Cu multilayer in the CPP (current perpendicular to the plane) geometry
5. Perpendicular hot electron spin-valve effect in a new magnetic field sensor: the spin-valve transistor
6. Room temperature-operating spin-valve transistor formed by vacuum bonding
7. Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature
8. Metal bonding during sputter film deposition