3-D finite element simulation of wafer thermal distortion and stress fields in exposure process

International Journal of Heat and Mass Transfer

Volumn 45, Issue 3, 2001, Pages 619-630

  Lin, Zone Ching ^a   Wu, Wen Jang ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

Exposure; Finite element method; Thermal deformation; Thermal stress; Wafer

Indexed keywords

COMPUTER SIMULATION; DEFORMATION; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; THERMAL STRESS; WSI CIRCUITS;

THERMAL DEFORMATION GRADIENTS;

THERMAL EXPANSION;

DEFORMATION; FINITE ELEMENT METHOD; STRESS; THERMAL EXPANSION;

EID: 0035808090     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0017-9310(01)00163-6     Document Type: Article

References (15)

1. Mask overlay scaling error caused by exposure energy using a steeper
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5. Thermoelastic solutions for a semi-infinite substrate with a powered electronic device
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8. Finite element simulation of a stress history during the manufacturing process of thin film stacks in VLSI structures
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11. Thermal modeling of a wafer in a rapid thermal processor
12. A coupled analysis of the thermo-elastic-plastic large deformation for upsetting process
13. A study of improving overlay accuracy for a stepper in IC manufacture
14. Multiple linear regression analysis of the overlay accuracy model