Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 259-265

  Masuda, Atsushi ^a   Niikura, Chisato ^a   Ishibashi, Yoriko ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; FILM PREPARATION; HYDROGENATION;

CATALYTIC CHEMICAL VAPOR DEPOSITION; DANGLING BOND DENSITY; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS SILICON;

AMORPHOUS SILICON;

EID: 0035254786     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00182-3     Document Type: Article

References (5)

1. Matsumura H. J. Appl. Phys. 65:1989;4396.
2. Mahan A.H., Carapella J., Nelson B.P., Crandall R.S., Balberg I. J. Appl. Phys. 69:1991;6728.
3. Niikura C., Masuda A., Matsumura H. J. Appl. Phys. 86:1999;985.
4. Langford A.A., Fleet M.L., Nelson B.P., Lanford W.A., Maley N. Phys. Rev. B. 45:1992;13367.
5. T. Takagi, R. Hayashi, A. Payne, W. Futako, T. Nishimoto, M. Takai, M. Kondo, A. Matsuda, High-rate growth of stable a-Si:H, Mater. Res. Soc. Symp. Proc. 557 (1999) 105.