Electronic and optical properties of hot-wire-deposited microcrystalline silicon

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 982-986

  Bruggemann R ^a,b   Hierzenberger, A ^a   Reinig, P ^b   Rojahn, M ^b   Schubert, M B ^a   Schweizer, S ^b   Wanka, H N ^a   Zrinscak I ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

Absorption; Hot wire; Microcrystalline silicon; Mobility lifetime product; Photoconductivity; Recombination; Reflection

Indexed keywords

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; FERMI LEVEL; LIGHT ABSORPTION; LIGHT REFLECTION; LIGHT SCATTERING; LIGHT TRANSMISSION; PHOTOCONDUCTIVITY; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ABSORPTION COEFFICIENT; HOT WIRE DEPOSITION; MICROCRYSTALLINE MATERIALS;

SEMICONDUCTING FILMS;

EID: 0032068985     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00260-9     Document Type: Article

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