Thickness-dependent strain relaxation in Si0.8Ge0.2/Si(0 0 1) epitaxial films studied by spectroscopic ellipsometry

Solid State Communications

Volumn 106, Issue 9, 1998, Pages 591-595

  Bahng, Jae Ho ^a   Kim, Kwang Joo ^a   Ihm, S H ^b   Kim, J Y ^b  

^a Konkuk University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

B. epilayer; D. critical point energy; D. dielectric function; D. strain

Indexed keywords

BAND STRUCTURE; CRYSTAL LATTICES; DIELECTRIC PROPERTIES OF SOLIDS; EPITAXIAL GROWTH; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPY; STRAIN; THICK FILMS;

CRITICAL POINT ENERGY; DIELECTRIC RESPONSE; EPITAXIAL FILM; FILM THICKNESS; LATTICE MISMATCH; SPECTROSCOPIC ELLIPSOMETRY; STRAIN RELAXATION;

ELLIPSOMETRY;

EID: 0032091628     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00107-0     Document Type: Article

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