Monte Carlo simulation of growth of porous SiOx by vapor deposition

Physical Review Letters

Volumn 86, Issue 14, 2001, Pages 3052-3055

  Burlakov, V M ^a   Briggs, G A D ^a   Sutton, A P ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; MONTE CARLO METHODS; OXYGEN; POROSITY; POROUS SILICON; SUBSTRATES; SURFACE PHENOMENA; VAPOR DEPOSITION;

AMORPHOUS SILICON OXIDE;

SILICA;

EID: 0035794528     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.3052     Document Type: Article

References (16)