Electrohydrodynamic instabilities in polymer films

Europhysics Letters

Volumn 53, Issue 4, 2001, Pages 518-524

  Schaffer E ^a,b   Thurn Albrecht, T ^c,d   Russell, T P ^c   Steiner, U ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b UNIVERSITY OF KONSTANZ   (Germany)

^c UNIVERSITY OF MASSACHUSETTS   (United States)

^d UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035793499     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i2001-00183-2     Document Type: Article

References (30)

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27. The silicon wafers (donated by Wacker-Chemie GmbH) had a (≈ 2 nm thick) native oxide layer. Prior to the deposition of the polymer film, the wafers were cleaned using a "snow-jet" (SHERMAN R., HIRT D. and VANE R. J., J. Vac. Sci. Technol., 12 (1994) 1876). The cleaned silicon oxide surfaces had a water contact angle of less than 10° and were completely wetted by all polymers used in this study.
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30. el, two contributions to the free-energy change have to be considered: i) the redistribution of dielectric liquid inside the capacitor and ii) additional dielectric liquid which is drawn into the capacitor from an outside reservoir.