Round-off of trench corner by post-cylindrical molecular pump sidewall oxidation for 0.25 μm and beyond technologies

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 197-200

  Chung, Y S ^a   Jeon, C W ^a   Kim, J H ^a   Han, S K ^a   Hwang, J W ^a   Kim, S Y ^a   Lee, J G ^a   Hyun, I S ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FIELD EFFECT TRANSISTORS; MOLECULAR STRUCTURE; OXIDATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CYLINDRICAL MOLECULAR PUMP (CMP) SIDEWALL OXIDATION; KINK EFFECTS; SHALLOW TRENCH ISOLATION (STI) PROCESS;

CMOS INTEGRATED CIRCUITS;

EID: 0033697216     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591172     Document Type: Article

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