Power devices for high voltage integrated circuits: New device and technology concepts

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2001, Pages 441-448

  Amaratunga, Gehan ^a   Udrea, Florin ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ENERGY EFFICIENCY; INDUSTRIAL APPLICATIONS; INSULATED GATE BIPOLAR TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; SILICON ON INSULATOR TECHNOLOGY;

ELECTRIC POWER; JUNCTION-ISOLATION TECHNOLOGY; MOS GATE CONTROL; SWITCHING TRANSISTORS;

POWER INTEGRATED CIRCUITS;

EID: 0035744025     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. Opportunities for PICs in inductor motor drives
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9. Simulated superior performances of semiconductor superjunction devices
10. A new generation of high voltage MOSFETs breaks the circuit line of Silicon
11. Lateral unbalanced super junction (USJ)/3D resurf for high breakdown voltage on SOI