Comprehensive model for nitrogen diffusion in silicon

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 847-850

  Adam, Lahir Shaik ^a   Law, Mark E ^b   Hegde, Suri ^c   Dokumaci, Omer ^c  

^a TEXAS INSTRUMENTS   (United States)

^b University of Florida   (United States)

^c IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; NITROGEN; OXIDATION;

GATE OXIDE; NITROGEN DIFFUSION; NITROGEN IMPLANTATION;

SILICON WAFERS;

EID: 0035718245     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979646     Document Type: Article

References (6)

1. High performance 0.2μm CMOS with 25 a gate oxide grown on nitrogen implanted Si substrates
2. A physical model for implanted nitrogen diffusion and its effect on oxide growth
3. Through bond diffusion of nitrogen in silicon
4. A new model for (311) defects based on in-situ measurements
5. Modeling the nucleation and evolution of end of range dislocation loops in silicon