Computer simulation of reactive sputtering

International Journal of Materials and Product Technology

Volumn , Issue SPEC. ISS. VOL.1, 2001, Pages 101-106

  Zhu, Shenglong ^a   Wang, Fuhui ^a   Wu, Weitao ^a   Xin, Li ^a   Hu, Chuanshun ^a   Yang, Songlan ^a   Geng, Shujiang ^a   Li, Mingsheng ^a   Xiong, Yuming ^a   Chen, Kewei ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

Author keywords

Computer simulation; Kinetics modeling; Reactive sputtering

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRON TRANSITIONS; HYSTERESIS; KINETIC THEORY; MATHEMATICAL MODELS;

HYSTERESIS EFFECT; KINETICS MODEL; REACTIVE SPUTTERING; STEADY STATE TRANSITION;

SPUTTERING;

EID: 0035717708     PISSN: 02681900     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. Mechanism of rf reactive sputtering
2. Influences of the nitrogen partial pressure on the properties of d.c.-sputtered titanium and titanium nitride films
3. The formation and control of direct current magnetron discharges for the high-rate reactive processing of thin films
4. Reactive sputtering deposition: A quantitative analysis
5. Mechanisms of reactive sputtering of indium III: A general phenomenological model for reactive sputtering
6. 2 atmospheres
7. Modeling of reactive sputtering of compound materials
8. Time-dependent simulation modelling of reactive sputtering
9. Investigation of kinetics model of dc reactive sputtering
10. Simulations of reactive sputtering with constant voltage power supply
11. Abnormal steady states in reactive sputtering
12. Reactive sputter deposition of alumina films on superalloys and their high-temperature corrosion resistance