Quantum tunneling Sb-heterostructure millimeter-wave diodes

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 765-767

  Schulman, J N ^a   Croke, E T ^a   Chow, D H ^a   Dunlap, H L ^a   Holabird, K S ^a   Morgan, M A ^a   Weinreb, S ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

EPITAXIAL LAYERS CONDUCTION BAND; PASSIVE MILLIMETER WAVE IMAGING; QUANTUM TUNNELING; SQUARE LAW RADIOMETRY; VALENCE BAND; VOLTAGE SENSITIVITY;

SEMICONDUCTOR DIODES;

EID: 0035715723     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979627     Document Type: Article

References (4)

1. Sb-heterostructure interband backward diodes
2. Fabrication of monolithically integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes
3. Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy