Model for the evolution of dislocation loops in silicon

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 210-213

  Avci, Ibrahim ^a   Rueda, Hernan A ^a   Law, Mark E ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); NORMAL DISTRIBUTION; POINT DEFECTS; SEMICONDUCTOR DEVICE MODELS; STRESS ANALYSIS;

STATISTICAL POINT DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033681868     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (15)