Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 425-430

  Morita, Toshihiro ^a   Kikuchi, Akihiko ^a   Nomura, Ichirou ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

Bandgap energy (Eg); Electron probe x ray microanalysis (EPMA); MgZnCdSe; Molecular beam epitaxy (MBE); Photoluminescence (PL)

Indexed keywords

EID: 0002548680     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666615     Document Type: Article

References (9)

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