Epitaxial growth of pure 28Si thin films using isotopically purified ion beams

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 12 A, 2001, Pages

  Tsubouchi, Nobuteru ^a   Chayahara, Akiyoshi ^a   Mokuno, Yoshiaki ^a   Kinomura, Atsushi ^a   Horino, Yuji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

IBD method; Mass selected negative 28Si ion beams; Pure 28Si homoepitaxial films

Indexed keywords

FILM GROWTH; ION BEAM ASSISTED DEPOSITION; ION BEAMS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

HOMOEPITAXIAL FILMS;

THIN FILMS;

EID: 0035698827     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1283     Document Type: Article

References (20)