Ultra-small MOSFETs: The importance of the full Coulomb interaction on device characteristics

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 75-78

  Gross, W J ^a   Vasileska, D ^a   Ferry, D K ^a  

^a Arizona State University   (United States)

Author keywords

Device modeling; Direct Coulomb interaction; Discrete impurities

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; MOLECULAR DYNAMICS; MONTE CARLO METHODS; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

DIRECT COULOMB INTERACTIONS;

MOSFET DEVICES;

EID: 0035693149     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/78780     Document Type: Conference Paper

References (6)

1. A novel approach for introducing the electron-electron and electron-impurity in particle-based simulations
2. Energy exchange in single-particle electron-electron scattering
3. Long-range Coulomb interactions in small silicon devices: Transconductance and mobility degradation
4. Electron -electron interaction and high field transport in Si
5. Ultra-small MOSFETs: The importance of the full Coulomb interaction on device characteristics
6. The silicon MOSFET from a transmission viewpoint