Long-range coulomb interactions in small silicon devices: Transconductance and mobility degradation

2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Volumn , Issue , 2000, Pages 461-464

  Fischetti, M V ^a   Laux, S E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Coulomb interactions; Mobility; Monte carlo simulations; MOS transistors; VLSI scaling

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON; TRANSCONDUCTANCE; VLSI CIRCUITS;

COULOMB INTERACTIONS; MOBILITY; MONTE CARLO SIMULATIONS; VLSI SCALING;

SEMICONDUCTOR DEVICES;

EID: 0007927567     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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