Novel high density, low voltage SRAM cell with a vertical NDR device

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 66-67

  Nemati, Farid ^a   Plummer, James D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT LAYOUT; NEGATIVE RESISTANCE; SEMICONDUCTING SILICON; SUBSTRATES;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR); STATIC RANDOM ACCESS MEMORY (SRAM);

RANDOM ACCESS STORAGE;

EID: 0031644049     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)