A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cycles

IEEE Transactions on Electron Devices

Volumn 46, Issue 9, 1999, Pages 1883-1889

  Chung, Steve S ^a,b   Yih, Cherng Ming ^b   Cheng, Shui Ming ^b   Liang, Mong Song ^c  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Science Base Industrial Park   (Taiwan)

Author keywords

Flash memory; Hot carrier reliability

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (COMPUTER);

FLASH MEMORY CELLS; HOT CARRIER RELIABILITY;

ASSOCIATIVE STORAGE;

EID: 0032595357     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.784189     Document Type: Article

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