Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the maximum entropy principle

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 273-279

  Muscato, O ^a   Romano, V ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

Charge transport; Electron devices; Hydrodynamical model

Indexed keywords

ACOUSTOELECTRIC EFFECTS; BAND STRUCTURE; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON DEVICES; ELECTRON TRANSPORT PROPERTIES; ENTROPY; HYDRODYNAMICS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING SILICON;

PHONON SCATTERING; SUBMICRON SILICON DIODES;

SEMICONDUCTOR DIODES;

EID: 0035690629     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/52981     Document Type: Conference Paper

References (7)

1. Non parabolic band transport in semiconductors: Closure of the moment equations
2. Non parabolic band transport in semiconductors: Closure of the production terms in the moment equations
3. Moment equations with maximum entropy closure for carrier trarsport in semiconductors devices: Validation in bulk silicon
4. + silicon diode
5. Nonparabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
6. Extended hydrodynamical model of carrier transport in semiconductors