Dielectric properties of oxidized porous silicon in a low resistivity substrate

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 767-770

  Peterson, Rebecca L ^a,b   Drayton, Rhonda F ^a  

^a University of Minnesota   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY MEASUREMENT; MORPHOLOGY; PASSIVATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS SILICON; SILICA; SUBSTRATES; TRANSMISSION LINE THEORY; WAVEGUIDES;

OXIDIZED POROUS SILICON; RAPID THERMAL OXIDATION;

SILICON WAFERS;

EID: 0035689619     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967005     Document Type: Article

References (12)

1. Monolithic planar RF inductor and waveguide structures on silicon with performance comparable to those in GaAs MMIC
2. Micromachined microwave transmission lines in CMOS technology
3. Coplanar waveguides on silicon substrate with thick oxidized porous (OPS) layer
4. Porous silicon technology for RF integrated circuit applications
5. Porous silicon: Material processing, properties and applications
6. W-band three-dimensional integrated circuits utilizing silicon micromachining
7. A multiline method of network analyzer calibration
8. An approach for fabricating high-performance inductors on low-resistivity substrates
9. Selective oxidized porous silicon (SOPS) substrate for microwave power chip-packaging
10. High-performance planar inductor on thick oxidized porous silicon (OPS) substrate