P-HEMTs for low-voltage portable applications using filled gate fabrication process

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 241-244

  Martinez, M J ^a   Schirmann, E ^a   Durlam, M ^a   Halchin, D ^a   Burton, R ^a   Huang, J H ^a   Tehrani, S ^a   Reyes, A ^a   Green, D ^a   Cody, N ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; DIELECTRIC MATERIALS; DRY ETCHING; GATES (TRANSISTOR); OHMIC CONTACTS; PASSIVATION; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTER DEPOSITION; SUBSTRATES;

GATE METALLIZATION; POWER ADDED EFFICIENCY; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; SUBTRACTIVE GATE ETCH; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030378112     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)