LD optical switch with polarization insensitivity over a wide wavelength range

IEEE Journal of Quantum Electronics

Volumn 34, Issue 2, 1998, Pages 269-275

  Takeshita, Tatsuya ^b,c,d,e   Yoshino, Kaoru ^b,f,g,h   Ito, Toshio ^b,e,g,i   Lui, Wayne W ^{a,b,j,k,l,m,n,o,p,q}   Okamoto, Minoru ^a,b   Kondo, Yasuhiro ^a,b   Kishi, Kenji ^b   Tamamura, Toshiaki ^b   Suzuki, Yasuhiro ^a,b   Magari, Katsuaki ^a,b   Yamamoto, Mitsuo ^b   Naganuma, Mitsuru ^a,b  

^a IEEE

^b NTT CORPORATION   (Japan)

^c KAGOSHIMA UNIVERSITY   (Japan)

^d KYUSHU UNIVERSITY   (Japan)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^f NAGOYA UNIVERSITY   (Japan)

^g Musashino Electrical Communication Lab   (Japan)

^h Institute of Electronics   (Japan)

ⁱ KEIO UNIVERSITY   (Japan)

^j UNIVERSITY OF CALIFORNIA   (United States)

^k Department of Obstetrics Gynecology   (United States)

^l American Electronics Association   (United States)

^m NEC CORPORATION   (Japan)

ⁿ LUCENT TECHNOLOGIES   (United States)

^o Cornell University ^*  (United States)

^p AMERICAN PHYSICAL SOCIETY   (United States)

^q OPTICAL SOCIETY OF AMERICA   (United States)

more..

Author keywords

Bulk active layer; Indium devices; Optical polarization; Semiconductor lasers; Semiconductor switches; TM mode lasing

Indexed keywords

DRY ETCHING; GAIN MEASUREMENT; HETEROJUNCTIONS; LASER MODES; LIGHT POLARIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

BULK ACTIVE LAYERS; DOUBLE HETEROSTRUCTURE (DH) LASERS; LASER DIODE OPTICAL SWITCHES (LDSW); TRANSVERSE MAGNETIC (TM) MODE LASING;

OPTICAL SWITCHES;

EID: 0032002192     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.658707     Document Type: Article

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