High temperature performance of LDMOSFETs used in RFIC applications

1998 High-Temperature Electronic Materials, Devices and Sensors Conference

Volumn 1998-February, Issue , 1998, Pages 100-104

  Perugupalli, P ^a   Trivedi, M ^a   Shenai, K ^a   Leong, S K ^b  

^a University of Illinois at Chicago   (United States)

^b PolyFET RF Devices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEATING; HIGH TEMPERATURE APPLICATIONS; SILICON ON INSULATOR TECHNOLOGY; WIRELESS TELECOMMUNICATION SYSTEMS;

BURIED OXIDE LAYERS; HIGH TEMPERATURE; HIGH TEMPERATURE PERFORMANCE; MIXED-MODE CIRCUITS; PACKAGE PARASITICS; RF POWER TRANSISTORS; THERMAL RUNAWAYS; WIRELESS APPLICATION;

THERMAL CONDUCTIVITY;

EID: 0003381346     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HTEMDS.1998.730658     Document Type: Conference Paper

References (4)

1. Alan Wood, Chris Dragon, and Wayne Burger, "High efficiency silicon LDMOS technology for 2 Ghz power amplifier applications, " EDM Tech. Dig., pp4.2.1-4.2.4, 1996.
2. D. A. Dallman, and K. Shenai, "Scaling constraints imposed by self-heating in submicron SOI MOSFETs," IEEE Trans on Electron Dev/'ces,vol.42, no.3,pp489-496, March 1995.
3. ATLAS Users's manual, SILVACO International, Santa Clara, CA.
4. P. Perugupalli, M. Trivedi, K. Shenai, and S. K. Leong," Modeling and characterization of 80V for LDMOSFET for RF communications," IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 9294, 1997.