Coplanar and microstrip oscillators in SiGe SIMMWIC technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1563-1566

  Strohm, Karl M ^a   Rheinfelder, Clemens N ^a   Luy, Johann Friedrich ^a   Nuechter, Peter ^b   Hess, Thomas ^b   Heinrich, Wolfgang ^c   Kuhnert, Holger ^c   Nadarassin, Madi ^d   Warns, Christoph ^d   Menzel, Wolfgang ^d  

^a DAIMLER AG   (Germany)

^b AIRBUS GROUP INNOVATIONS   (Germany)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^d UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MICROSTRIP DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE;

HIGH RESISTIVITY SILICON SUBSTRATES; MICROSTRIP OSCILLATORS; SILICON MILLIMETER WAVE INTEGRATED CIRCUITS;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0035686240     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967201     Document Type: Article

References (9)

1. 47 GHz SiGe- MMIC oscillator
2. Via hole technology for microstrip transmission lines and passive elements on high resistivity silicon
3. Growth of 100 GHz SiGe heterojunction bipolar transistor (HBT) structures
4. SiGe heterojunction bipolar transistors
5. Coplanar Ka-band SiGe-MMIC amplifier
6. Quasi-TEM description of MMIC coplanar lines including conductor loss effects
7. Coplanar passive elements on Si-substrate for frequencies up to 110 GHz
8. Accurate large signal modeling of SiGe HBT's