Power characteristics of high voltage LDMOS transistors

2000 30th European Microwave Conference, EuMC 2000

Volumn , Issue , 2000, Pages

  Gebara, Edward ^a   Rorsman, Niklas ^b   Olsson, Jörgen ^c   Zirath, Herbert ^b   Eklund, Klas Håkan ^d   Laskar, Joy ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c UPPSALA UNIVERSITY   (Sweden)

^d Eklund Innovation ^*  (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS;

CMOS PROCESSS; HIGH BREAKDOWN VOLTAGE; HIGH VOLTAGE; LDMOS TRANSISTORS; OUTPUT POWER DENSITY; POWER CHARACTERISTIC; POWER-ADDED EFFICIENCY; SUPPLY VOLTAGES;

MOS DEVICES;

EID: 84897528531     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2000.338859     Document Type: Conference Paper

References (3)

1. J.-J. Bouny, "Advantages of LDMOS in high power linear amplification," Microwave Engineering Europe, pp. 37-40, April, 1996.
2. J. Olsson et al., "A Capacitance-Voltage Measurement Method for DMOS Transistor Channel Length Extraction," Proc. IEEE ICMTS, pp. 13 5-140, 1999.
3. L. Bengtsson, "Large Signal Modeling of Microwave Transistor" Department of Microelectronics ED, Chalmers University of Technology, Goteborg Sweden 1999, Technical report, no 368.